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Ieee Journal Of The Electron Devices SocietySCIE

国际简称：IEEE J ELECTRON DEVI 参考译名：IEEE电子器件学会杂志

中科院分区
3区
CiteScore分区
Q2
JCR分区
Q3

基本信息：: ISSN：2168-6734; E-ISSN：2168-6734; 是否OA：开放; 是否预警：否; TOP期刊：否

出版信息：: 出版地区：UNITED STATES; 出版商：Institute of Electrical and Electronics Engineers Inc.; 出版语言：English; 出版周期：1 issue/year; 出版年份：2013; 研究方向：Biochemistry, Genetics and Molecular Biology-Biotechnology

评价信息：: 影响因子：2; H-index：23; CiteScore指数：5.2; SJR指数：0.505; SNIP指数：0.955

发文数据：: Gold OA文章占比：97.60%; 研究类文章占比：98.91%; 年发文量：92; 自引率：0.0434...; 开源占比：0.9789; 出版撤稿占比：0; 出版国人文章占比：0.21; OA被引用占比：1

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英文简介期刊介绍 CiteScore数据中科院SCI分区 JCR分区发文数据常见问题

英文简介Ieee Journal Of The Electron Devices Society期刊介绍

The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC's, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.

期刊简介Ieee Journal Of The Electron Devices Society期刊介绍

《Ieee Journal Of The Electron Devices Society》自2013出版以来，是一本工程技术优秀杂志。致力于发表原创科学研究结果，并为工程技术各个领域的原创研究提供一个展示平台，以促进工程技术领域的的进步。该刊鼓励先进的、清晰的阐述，从广泛的视角提供当前感兴趣的研究主题的新见解，或审查多年来某个重要领域的所有重要发展。该期刊特色在于及时报道工程技术领域的最新进展和新发现新突破等。该刊近一年未被列入预警期刊名单，目前已被权威数据库SCIE收录，得到了广泛的认可。

该期刊投稿重要关注点：

预计审稿时间： 9 Weeks
工程技术
ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
中科院3区
非预警

Cite Score数据（2024年最新版）Ieee Journal Of The Electron Devices Society Cite Score数据

CiteScore：5.2
SJR：0.505
SNIP：0.955

学科类别	分区	排名	百分位
大类：Materials Science 小类：Electronic, Optical and Magnetic Materials	Q2	90 / 284	68%
大类：Materials Science 小类：Electrical and Electronic Engineering	Q2	253 / 797	68%
大类：Materials Science 小类：Biotechnology	Q2	139 / 311	55%

CiteScore 是由Elsevier(爱思唯尔)推出的另一种评价期刊影响力的文献计量指标。反映出一家期刊近期发表论文的年篇均引用次数。CiteScore以Scopus数据库中收集的引文为基础，针对的是前四年发表的论文的引文。CiteScore的意义在于，它可以为学术界提供一种新的、更全面、更客观地评价期刊影响力的方法，而不仅仅是通过影响因子(IF)这一单一指标来评价。

历年Cite Score趋势图

中科院SCI分区Ieee Journal Of The Electron Devices Society 中科院分区

中科院 2023年12月升级版 综述期刊：否 Top期刊：否

大类学科	分区	小类学科	分区
工程技术	3区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气	4区

中科院分区表 是以客观数据为基础，运用科学计量学方法对国际、国内学术期刊依据影响力进行等级划分的期刊评价标准。它为我国科研、教育机构的管理人员、科研工作者提供了一份评价国际学术期刊影响力的参考数据，得到了全国各地高校、科研机构的广泛认可。

中科院分区表 将所有期刊按照一定指标划分为1区、2区、3区、4区四个层次，类似于“优、良、及格”等。最开始，这个分区只是为了方便图书管理及图书情报领域的研究和期刊评估。之后中科院分区逐步发展成为了一种评价学术期刊质量的重要工具。

历年中科院分区趋势图

JCR分区Ieee Journal Of The Electron Devices Society JCR分区

2023-2024 年最新版

按JIF指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	202 / 352	42.8%

按JCI指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	179 / 354	49.58%

JCR分区的优势在于它可以帮助读者对学术文献质量进行评估。不同学科的文章引用量可能存在较大的差异，此时单独依靠影响因子(IF)评价期刊的质量可能是存在一定问题的。因此，JCR将期刊按照学科门类和影响因子分为不同的分区，这样读者可以根据自己的研究领域和需求选择合适的期刊。

历年影响因子趋势图

发文数据

2023-2024 年国家/地区发文量统计

国家/地区数量
CHINA MAINLAND168
USA99
Taiwan98
South Korea74
Japan61
India40
France29
GERMANY (FED REP GER)27
Switzerland23
Belgium20

本刊中国学者近年发表论文

1、Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform
Author: Zhu, Yuhao; Li, Fan; Cui, Miao; Fang, Zhicheng; Li, Ang; Yang, Dongyi; Zhao, Yinchao; Wen, Huiqing; Liu, Wen

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 230-234. DOI: 10.1109/JEDS.2023.3265372
2、New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs
Author: Zhu, Kunfeng; Zhang, Peijian; Xu, Zicheng; Wang, Tao; Yi, Xiaohui; Hong, Min; Yang, Yonghui; Zhang, Guangsheng; Liu, Jian; Wei, Jianan; Pu, Yang; Huang, Dong; Luo, Ting; Chen, Xian; Tang, Xinyue; Tan, Kaizhou; Chen, Wensuo

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 30-35. DOI: 10.1109/JEDS.2023.3239341
3、Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off
Author: Zhang, Meng; Zhang, Yamin; Li, Baikui; Feng, Shiwei; Hua, Mengyuan; Tang, Xi; Wei, Jin; Chen, Kevin J.

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 198-203. DOI: 10.1109/JEDS.2023.3259639
4、Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks
Author: Sun, Yu; Schwarzenbach, Walter; Yuan, Sicong; Chen, Zhuo; Yang, Yanbin; Nguyen, Bich-Yen; Gao, Dawei; Zhang, Rui

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 210-215. DOI: 10.1109/JEDS.2023.3260978
5、Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of beta-Ga2O3/Si Schottky Barrier Diodes
Author: Qu, Zhenyu; Xu, Wenhui; You, Tiangui; Shen, Zhenghao; Zhao, Tiancheng; Huang, Kai; Yi, Ailun; Zhang, David Wei; Han, Genquan; Ou, Xin; Hao, Yue

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 135-140. DOI: 10.1109/JEDS.2023.3242968
6、Novel Stacked Passivation Structure for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit
Author: Liu, Xiaoyi; Qin, Jian; Chen, Jingxiong; Chen, Jianyu; Wang, Hong

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 130-134. DOI: 10.1109/JEDS.2023.3241306
7、RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera
Author: Liu, Chang; Liu, Hong Xia; Chen, Yi Qiang; Shi, Yi Jun; Xie, Yu Han; Chen, Si; Lai, Ping; He, Zhi Yuan; Huang, Yun

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 47-53. DOI: 10.1109/JEDS.2023.3239100
8、Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors
Author: Islam, Md. Sherajul; Mazumder, Abdullah Al Mamun; Zhou, Changjian; Stampfl, Catherine; Park, Jeongwon; Yang, Cary Y. Y.

Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2023; Vol. 11, Issue , pp. 235-247. DOI: 10.1109/JEDS.2023.3267081