当前位置：首页 SCI期刊 SCIE期刊工程技术中科院4区 JCRQ3 期刊介绍(非官网)

Microelectronics ReliabilitySCIE

国际简称：MICROELECTRON RELIAB 参考译名：微电子可靠性

中科院分区
4区
CiteScore分区
Q2
JCR分区
Q3

基本信息：: ISSN：0026-2714; E-ISSN：1872-941X; 是否OA：未开放; 是否预警：否; TOP期刊：否

出版信息：: 出版地区：ENGLAND; 出版商：Elsevier Ltd; 出版语言：English; 出版周期：Monthly; 出版年份：1964; 研究方向：工程技术-工程：电子与电气

评价信息：: 影响因子：1.6; H-index：80; CiteScore指数：3.3; SJR指数：0.394; SNIP指数：0.801

发文数据：: Gold OA文章占比：14.36%; 研究类文章占比：98.39%; 年发文量：310; 自引率：0.125; 开源占比：0.0623; 出版撤稿占比：0.0058...; 出版国人文章占比：0; OA被引用占比：0.0216...

投稿咨询加急见刊

英文简介期刊介绍 CiteScore数据中科院SCI分区 JCR分区发文数据常见问题

英文简介Microelectronics Reliability期刊介绍

Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.

Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.

期刊简介Microelectronics Reliability期刊介绍

《Microelectronics Reliability》自1964出版以来，是一本工程技术优秀杂志。致力于发表原创科学研究结果，并为工程技术各个领域的原创研究提供一个展示平台，以促进工程技术领域的的进步。该刊鼓励先进的、清晰的阐述，从广泛的视角提供当前感兴趣的研究主题的新见解，或审查多年来某个重要领域的所有重要发展。该期刊特色在于及时报道工程技术领域的最新进展和新发现新突破等。该刊近一年未被列入预警期刊名单，目前已被权威数据库SCIE收录，得到了广泛的认可。

该期刊投稿重要关注点：

预计审稿时间：较快,2-4周约8.3周
工程技术
ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
中科院4区
非预警

Cite Score数据（2024年最新版）Microelectronics Reliability Cite Score数据

CiteScore：3.3
SJR：0.394
SNIP：0.801

学科类别	分区	排名	百分位
大类：Engineering 小类：Safety, Risk, Reliability and Quality	Q2	83 / 207	60%
大类：Engineering 小类：Electrical and Electronic Engineering	Q2	395 / 797	50%
大类：Engineering 小类：Atomic and Molecular Physics, and Optics	Q3	118 / 224	47%
大类：Engineering 小类：Condensed Matter Physics	Q3	230 / 434	47%
大类：Engineering 小类：Surfaces, Coatings and Films	Q3	74 / 132	44%
大类：Engineering 小类：Electronic, Optical and Magnetic Materials	Q3	161 / 284	43%

CiteScore 是由Elsevier(爱思唯尔)推出的另一种评价期刊影响力的文献计量指标。反映出一家期刊近期发表论文的年篇均引用次数。CiteScore以Scopus数据库中收集的引文为基础，针对的是前四年发表的论文的引文。CiteScore的意义在于，它可以为学术界提供一种新的、更全面、更客观地评价期刊影响力的方法，而不仅仅是通过影响因子(IF)这一单一指标来评价。

历年Cite Score趋势图

中科院SCI分区Microelectronics Reliability 中科院分区

中科院 2023年12月升级版 综述期刊：否 Top期刊：否

大类学科	分区	小类学科	分区
工程技术	4区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 PHYSICS, APPLIED 物理：应用	4区 4区 4区

中科院分区表 是以客观数据为基础，运用科学计量学方法对国际、国内学术期刊依据影响力进行等级划分的期刊评价标准。它为我国科研、教育机构的管理人员、科研工作者提供了一份评价国际学术期刊影响力的参考数据，得到了全国各地高校、科研机构的广泛认可。

中科院分区表 将所有期刊按照一定指标划分为1区、2区、3区、4区四个层次，类似于“优、良、及格”等。最开始，这个分区只是为了方便图书管理及图书情报领域的研究和期刊评估。之后中科院分区逐步发展成为了一种评价学术期刊质量的重要工具。

历年中科院分区趋势图

JCR分区Microelectronics Reliability JCR分区

2023-2024 年最新版

按JIF指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	239 / 352	32.2%
学科：NANOSCIENCE & NANOTECHNOLOGY	SCIE	Q4	113 / 140	19.6%
学科：PHYSICS, APPLIED	SCIE	Q3	131 / 179	27.1%

按JCI指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q4	272 / 354	23.31%
学科：NANOSCIENCE & NANOTECHNOLOGY	SCIE	Q4	114 / 140	18.93%
学科：PHYSICS, APPLIED	SCIE	Q4	140 / 179	22.07%

JCR分区的优势在于它可以帮助读者对学术文献质量进行评估。不同学科的文章引用量可能存在较大的差异，此时单独依靠影响因子(IF)评价期刊的质量可能是存在一定问题的。因此，JCR将期刊按照学科门类和影响因子分为不同的分区，这样读者可以根据自己的研究领域和需求选择合适的期刊。

历年影响因子趋势图

本刊中国学者近年发表论文

1、Effect of Sb content on the phase structure and interface structure of Sn1.0Ag0.5Cu lead-free solder
Author: Xu, Fengxian; Zhu, Wenjia; Yan, Jikang; Zhao, Lingyan; Lv, Jinmei

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 140, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114883
2、Electrical characterization and temperature reliability of 4H-SiC Schottky barrier diodes after Electron radiation
Author: Xiang, Meiju; Wang, Duowei; He, Mu; Rui, Guo; Ma, Yao; Zhu, Xuhao; Mei, Fan; Gong, Min; Li, Yun; Huang, Mingmin; Yang, Zhimei

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114886
3、Small sample classification based on data enhancement and its application in flip chip defection
Author: Sha, Yuhua; He, Zhenzhi; Gutierrez, Hector; Du, Jiawei; Yang, Weiwei; Lu, Xiangning

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114887
4、BP neural network for non-invasive IGBT junction temperature online detection
Author: Liu, Li; Peng, Qianlei; Jiang, Huaping; Ran, Li; Wang, Yang; Du, Changhong; Chen, Jian; Zhou, Hongbo; Chen, Yang; Peng, Zhiyuan

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114882
5、Thermal stress and drop stress analysis based on 3D package reliability study
Author: Xue, Leyang; Li, Xiang; Zhang, Hao

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114888
6、Study on the interface mechanism of copper migration failure in solder mask-substrate package
Author: Li, Yesu; Lin, Shengru; Chi, Panwang; Zou, Yuqiang; Yao, Weikai; Li, Ming; Gao, Liming

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114891
7、Effect of temperature cycling on the leakage mechanism of TSV liner
Author: Chen, Si; Jian, Xiaodong; Li, Kai; Li, Guoyuan; Wang, Zhizhe; Yang, Xiaofeng; Fu, Zhiwei; Wang, Hongyue

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114889
8、Simulation analysis of electromagnetic pulse susceptibility and hardening design for system-in-package SZ0501
Author: Li, Ning; Li, Yang; Guo, Yaxin; He, Chaohui

Journal: MICROELECTRONICS RELIABILITY. 2023; Vol. 141, Issue , pp. -. DOI: 10.1016/j.microrel.2022.114892