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Iet Power Electronics

Iet Power ElectronicsSCIE

国际简称:IET POWER ELECTRON  参考译名:工业电力电子

  • 中科院分区

    4区

  • CiteScore分区

    Q2

  • JCR分区

    Q3

基本信息:
ISSN:1755-4535
E-ISSN:1755-4543
是否OA:开放
是否预警:否
TOP期刊:否
出版信息:
出版地区:ENGLAND
出版商:Wiley
出版语言:English
出版周期:Monthly
出版年份:2008
研究方向:ENGINEERING, ELECTRICAL & ELECTRONIC
评价信息:
影响因子:1.7
H-index:61
CiteScore指数:5.5
SJR指数:0.736
SNIP指数:0.841
发文数据:
Gold OA文章占比:79.48%
研究类文章占比:96.91%
年发文量:194
自引率:0.1
开源占比:0.3463
出版撤稿占比:0
出版国人文章占比:0.29
OA被引用占比:0.0059...
英文简介 期刊介绍 CiteScore数据 中科院SCI分区 JCR分区 发文数据 常见问题

英文简介Iet Power Electronics期刊介绍

IET Power Electronics aims to attract original research papers, short communications, review articles and power electronics related educational studies. The scope covers applications and technologies in the field of power electronics with special focus on cost-effective, efficient, power dense, environmental friendly and robust solutions, which includes:

Applications:

Electric drives/generators, renewable energy, industrial and consumable applications (including lighting, welding, heating, sub-sea applications, drilling and others), medical and military apparatus, utility applications, transport and space application, energy harvesting, telecommunications, energy storage management systems, home appliances.

Technologies:

Circuits: all type of converter topologies for low and high power applications including but not limited to: inverter, rectifier, dc/dc converter, power supplies, UPS, ac/ac converter, resonant converter, high frequency converter, hybrid converter, multilevel converter, power factor correction circuits and other advanced topologies.

Components and Materials: switching devices and their control, inductors, sensors, transformers, capacitors, resistors, thermal management, filters, fuses and protection elements and other novel low-cost efficient components/materials.

Control: techniques for controlling, analysing, modelling and/or simulation of power electronics circuits and complete power electronics systems.

Design/Manufacturing/Testing: new multi-domain modelling, assembling and packaging technologies, advanced testing techniques.

Environmental Impact: Electromagnetic Interference (EMI) reduction techniques, Electromagnetic Compatibility (EMC), limiting acoustic noise and vibration, recycling techniques, use of non-rare material.

Education: teaching methods, programme and course design, use of technology in power electronics teaching, virtual laboratory and e-learning and fields within the scope of interest.

Special Issues. Current Call for papers:

Harmonic Mitigation Techniques and Grid Robustness in Power Electronic-Based Power Systems - https://digital-library.theiet.org/files/IET_PEL_CFP_HMTGRPEPS.pdf

期刊简介Iet Power Electronics期刊介绍

《Iet Power Electronics》自2008出版以来,是一本工程技术优秀杂志。致力于发表原创科学研究结果,并为工程技术各个领域的原创研究提供一个展示平台,以促进工程技术领域的的进步。该刊鼓励先进的、清晰的阐述,从广泛的视角提供当前感兴趣的研究主题的新见解,或审查多年来某个重要领域的所有重要发展。该期刊特色在于及时报道工程技术领域的最新进展和新发现新突破等。该刊近一年未被列入预警期刊名单,目前已被权威数据库SCIE收录,得到了广泛的认可。

该期刊投稿重要关注点:

Cite Score数据(2024年最新版)Iet Power Electronics Cite Score数据

  • CiteScore:5.5
  • SJR:0.736
  • SNIP:0.841
学科类别 分区 排名 百分位
大类:Engineering 小类:Electrical and Electronic Engineering Q2 235 / 797

70%

CiteScore 是由Elsevier(爱思唯尔)推出的另一种评价期刊影响力的文献计量指标。反映出一家期刊近期发表论文的年篇均引用次数。CiteScore以Scopus数据库中收集的引文为基础,针对的是前四年发表的论文的引文。CiteScore的意义在于,它可以为学术界提供一种新的、更全面、更客观地评价期刊影响力的方法,而不仅仅是通过影响因子(IF)这一单一指标来评价。

历年Cite Score趋势图

中科院SCI分区Iet Power Electronics 中科院分区

中科院 2023年12月升级版 综述期刊:否 Top期刊:否
大类学科 分区 小类学科 分区
工程技术 4区 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 4区

中科院分区表 是以客观数据为基础,运用科学计量学方法对国际、国内学术期刊依据影响力进行等级划分的期刊评价标准。它为我国科研、教育机构的管理人员、科研工作者提供了一份评价国际学术期刊影响力的参考数据,得到了全国各地高校、科研机构的广泛认可。

中科院分区表 将所有期刊按照一定指标划分为1区、2区、3区、4区四个层次,类似于“优、良、及格”等。最开始,这个分区只是为了方便图书管理及图书情报领域的研究和期刊评估。之后中科院分区逐步发展成为了一种评价学术期刊质量的重要工具。

历年中科院分区趋势图

JCR分区Iet Power Electronics JCR分区

2023-2024 年最新版
按JIF指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 227 / 352

35.7%

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 217 / 354

38.84%

JCR分区的优势在于它可以帮助读者对学术文献质量进行评估。不同学科的文章引用量可能存在较大的差异,此时单独依靠影响因子(IF)评价期刊的质量可能是存在一定问题的。因此,JCR将期刊按照学科门类和影响因子分为不同的分区,这样读者可以根据自己的研究领域和需求选择合适的期刊。

历年影响因子趋势图

发文数据

2023-2024 年国家/地区发文量统计
  • 国家/地区数量
  • CHINA MAINLAND473
  • India221
  • Iran164
  • USA93
  • Denmark59
  • Turkey56
  • Australia51
  • England42
  • Brazil40
  • Canada30

本刊中国学者近年发表论文

  • 1、The impact of phase sequence exchange on relay protection and its resolution schemes

    Author: Li, Hui; Li, Yifan; Huang, Shaofeng; Sun, Peng; Gao, Qi

    Journal: IET POWER ELECTRONICS. 2023; Vol. 16, Issue 1, pp. 26-36. DOI: 10.1049/pel2.12360

  • 2、An improved deadbeat predictive current control for induction motor drives

    Author: Wang, Xing; Zhang, Yongchang; Yang, Haitao

    Journal: IET POWER ELECTRONICS. 2023; Vol. 16, Issue 1, pp. 1-10. DOI: 10.1049/pel2.12358

  • 3、Quantitative damping reshaping method based on equivalent RLC circuits using an active damper

    Author: Li, Fei; Feng, Qiang; Wang, Yichao; Wang, Hanyu; Ma, Mingyao; Zhang, Xing

    Journal: IET POWER ELECTRONICS. 2023; Vol. 16, Issue 1, pp. 64-74. DOI: 10.1049/pel2.12363

  • 4、The mechanism and optimization method of the capacitance team used in double-sided LCC compensation topology

    Author: Xia, Nenghong; Xu, Xiaoying; Zhang, Fan; Zhu, Yimin; Huang, Chen; Lin, Jialiang

    Journal: IET POWER ELECTRONICS. 2023; Vol. 16, Issue 1, pp. 92-101. DOI: 10.1049/pel2.12365

  • 5、Fault-tolerant control technology of symmetrical six-phase permanent magnet synchronous motor

    Author: Gao, Hanying; Guo, Jie; Zhang, Bangping; Zhang, Guoqiang

    Journal: IET POWER ELECTRONICS. 2023; Vol. 16, Issue 1, pp. 37-52. DOI: 10.1049/pel2.12361

  • 6、Modelling and output voltage distortion with capacitive current feedback control for single phase inverter powering non-linear load

    Author: Zhong, Minghang; Tong, Xiangqian

    Journal: IET POWER ELECTRONICS. 2023; Vol. 16, Issue 2, pp. 180-192. DOI: 10.1049/pel2.12373

  • 7、Improved sliding mode control for permanent magnet synchronous motor servo system

    Author: Lu, Huacai; Yang, Dongxue; Su, Zhongde

    Journal: IET POWER ELECTRONICS. 2023; Vol. 16, Issue 2, pp. 169-179. DOI: 10.1049/pel2.12372

  • 8、Design and experiments of isolated gate driver using discrete devices for silicon carbide MOSFET

    Author: Jiang, Dong; Wang, Hanxiang; Wang, Ruodong; Liu, Zicheng; Liu, Yongjiang; Lin, Zhenjun; Wan, Weiwei

    Journal: IET POWER ELECTRONICS. 2023; Vol. 16, Issue 1, pp. 118-127. DOI: 10.1049/pel2.12368

投稿常见问题

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