当前位置：首页 SCI 期刊工程技术 Materials Science In Semiconductor Processing(非官网)

Materials Science In Semiconductor ProcessingSCIE

国际简称：MAT SCI SEMICON PROC 参考译名：半导体加工中的材料科学

中科院分区
3区
CiteScore分区
Q1
JCR分区
Q2

基本信息：: ISSN：1369-8001; E-ISSN：1873-4081; 是否OA：未开放; 是否预警：否; TOP期刊：否

出版信息：: 出版地区：ENGLAND; 出版商：Elsevier Ltd; 出版语言：English; 出版周期：Bimonthly; 出版年份：1998; 研究方向：工程技术-材料科学：综合

评价信息：: 影响因子：4.2; H-index：49; CiteScore指数：8; SJR指数：0.732; SNIP指数：0.992

发文数据：: Gold OA文章占比：5.21%; 研究类文章占比：96.22%; 年发文量：635; 自引率：0.0487...; 开源占比：0.0145; 出版撤稿占比：0; 出版国人文章占比：0.21; OA被引用占比：0.0123...

投稿咨询加急见刊

英文简介期刊介绍 CiteScore数据中科院SCI分区 JCR分区发文数据常见问题

英文简介Materials Science In Semiconductor Processing期刊介绍

Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.

Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.

Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.

期刊简介Materials Science In Semiconductor Processing期刊介绍

《Materials Science In Semiconductor Processing》自1998出版以来，是一本工程技术优秀杂志。致力于发表原创科学研究结果，并为工程技术各个领域的原创研究提供一个展示平台，以促进工程技术领域的的进步。该刊鼓励先进的、清晰的阐述，从广泛的视角提供当前感兴趣的研究主题的新见解，或审查多年来某个重要领域的所有重要发展。该期刊特色在于及时报道工程技术领域的最新进展和新发现新突破等。该刊近一年未被列入预警期刊名单，目前已被权威数据库SCIE收录，得到了广泛的认可。

该期刊投稿重要关注点：

预计审稿时间：约1.7个月约3.7周
工程技术
ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
中科院3区
非预警

Cite Score数据（2024年最新版）Materials Science In Semiconductor Processing Cite Score数据

CiteScore：8
SJR：0.732
SNIP：0.992

学科类别	分区	排名	百分位
大类：Engineering 小类：Mechanical Engineering	Q1	87 / 672	87%
大类：Engineering 小类：Condensed Matter Physics	Q1	59 / 434	86%
大类：Engineering 小类：Mechanics of Materials	Q1	60 / 398	85%
大类：Engineering 小类：General Materials Science	Q1	100 / 463	78%

CiteScore 是由Elsevier(爱思唯尔)推出的另一种评价期刊影响力的文献计量指标。反映出一家期刊近期发表论文的年篇均引用次数。CiteScore以Scopus数据库中收集的引文为基础，针对的是前四年发表的论文的引文。CiteScore的意义在于，它可以为学术界提供一种新的、更全面、更客观地评价期刊影响力的方法，而不仅仅是通过影响因子(IF)这一单一指标来评价。

历年Cite Score趋势图

中科院SCI分区Materials Science In Semiconductor Processing 中科院分区

中科院 2023年12月升级版 综述期刊：否 Top期刊：否

大类学科	分区	小类学科	分区
工程技术	3区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学：综合 PHYSICS, APPLIED 物理：应用 PHYSICS, CONDENSED MATTER 物理：凝聚态物理	3区 3区 3区 3区

中科院分区表 是以客观数据为基础，运用科学计量学方法对国际、国内学术期刊依据影响力进行等级划分的期刊评价标准。它为我国科研、教育机构的管理人员、科研工作者提供了一份评价国际学术期刊影响力的参考数据，得到了全国各地高校、科研机构的广泛认可。

中科院分区表 将所有期刊按照一定指标划分为1区、2区、3区、4区四个层次，类似于“优、良、及格”等。最开始，这个分区只是为了方便图书管理及图书情报领域的研究和期刊评估。之后中科院分区逐步发展成为了一种评价学术期刊质量的重要工具。

历年中科院分区趋势图

JCR分区Materials Science In Semiconductor Processing JCR分区

2023-2024 年最新版

按JIF指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q2	89 / 352	74.9%
学科：MATERIALS SCIENCE, MULTIDISCIPLINARY	SCIE	Q2	158 / 438	64%
学科：PHYSICS, APPLIED	SCIE	Q2	51 / 179	71.8%
学科：PHYSICS, CONDENSED MATTER	SCIE	Q2	25 / 79	69%

按JCI指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q2	113 / 354	68.22%
学科：MATERIALS SCIENCE, MULTIDISCIPLINARY	SCIE	Q2	125 / 438	71.58%
学科：PHYSICS, APPLIED	SCIE	Q2	47 / 179	74.02%
学科：PHYSICS, CONDENSED MATTER	SCIE	Q1	19 / 79	76.58%

JCR分区的优势在于它可以帮助读者对学术文献质量进行评估。不同学科的文章引用量可能存在较大的差异，此时单独依靠影响因子(IF)评价期刊的质量可能是存在一定问题的。因此，JCR将期刊按照学科门类和影响因子分为不同的分区，这样读者可以根据自己的研究领域和需求选择合适的期刊。

历年影响因子趋势图

发文数据

2023-2024 年国家/地区发文量统计

国家/地区数量
CHINA MAINLAND376
India309
South Korea97
Turkey76
Mexico73
Japan71
Iran65
USA63
Saudi Arabia55
Italy48

本刊中国学者近年发表论文

1、V2O5 nanobelts via a facile water-assisted strategy boosting electrochromic performance
Author: Sun, Haohao; Wang, Wenxuan; Fan, Qiongzhen; Qi, Yanyuan; Xiong, Yuli; Jian, Zelang; Chen, Wen

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 155, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107265
2、Ag/Ag3PO4 nanoparticles assembled on sepiolite nanofibers: Enhanced visible-light-driven photocatalysis and the important role of Ag decoration
Author: Ren, Xiaofei; Hu, Guicong; Guo, Qingbin; Gao, Dengzheng; Wang, Li; Hu, Xiaolong

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107272
3、Exploring the effect of oxygen environment on the Mo/CdTe/CdSe solar cell substrate configuration
Author: Yang, Xiutao; Long, Yuchen; Zheng, Yujie; Wang, Jiayi; Zhou, Biao; Xie, Shenghui; Li, Bing; Zhang, Jingquan; Hao, Xia; Karazhanov, Smagul; Zeng, Guanggen; Feng, Lianghuan

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107267
4、Slag refining at various viscosity conditions for SiC inclusion removal during Si scraps recycling
Author: Pan, Di; Jiang, Dachuan; Hu, Zhiqiang; Li, Pengting; Tan, Yi; Li, Jin; Li, Jiayan

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107274
5、Fabrication of interface-engineered Ni/NiO/rGO nanobush for highly efficient and durable oxygen reduction
Author: Wang, Yanan; Duan, Chunyang; Li, Junhua; Zhao, Zenghua; Xu, Jiasheng; Liu, Lin; Qian, Jianhua

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107259
6、The structural, mechanical and electronic properties of BaxNy compounds
Author: Wang, Gao-Min; Zeng, Wei; Zhang, Fan; Li, Xing-Han; Liu, Fu-Sheng; Tang, Bin; Zhong, Mi; Liu, Qi-Jun

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107268
7、Synergistic effect of 1,2,4-triazole and phytic acid as inhibitors on copper film CMP for ruthenium- based copper interconnected and the surface action mechanism analysis
Author: Luo, Fu; Niu, Xinhuan; Yan, Han; Zhang, Yinchan; Qu, Minghui; Zhu, Yebo; Hou, Ziyang

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107276
8、Hyperspectral camouflage coating using Palygorskite to simulate water absorption of healthy green leaves
Author: Lu, Haipeng; Bai, Xingzhi; Wang, Zhenxiong; Guo, Yang; Zhang, Li; Weng, Xiaolong; Xie, Jianliang; Liang, Difei; Deng, Longjiang

Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023; Vol. 156, Issue , pp. -. DOI: 10.1016/j.mssp.2022.107293